成員
現在成員
已全部畢業
已畢業成員
| 博士班 | 論文題目 | ||
| 82 | 黃智睦 | Physics, simulation and characterization of hot carrier injection induced reliability issues in submicron MOSFET's | |
| 83 | 謝定華 | MMIC Device Transport Physics, Modeling and a 2 GHz Down- converter Design | |
| 83 | 劉慈祥 | Hole Transport and Optical Transition Properties in SiGe Alloys and Strained Quantum Wells | |
| 85 | 張澤恩 | Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques | |
| 88 | 蔣汝平 | Investigation of Hot Carrier Stress-Induced Oxide Reliability Issues in Deep-Submicron CMOS Devices | |
| 90 | 王志豪 | Investigation and Control of Implantation Damage Induced Anomalous Diffusion in 0.13mm and beyond CMOS Device Design | |
| 91 | 鄒年凱 | investigation of oxide leakage current related reliability issues in VLSI devices | |
| 蔡慶威 | Investigation of Direct Tunneling Induced Reliability Issues in Ultra-Thin Oxide CMOS Devices | ||
| 92 | 李達元 | A Study on Process Related Reliabilties of CMOS Transistors with Ultra-thin Gate Dielectrics | |
| 93 | 吳俊威 | Investigation of Drain Current Flicker Noise in Analog n-MOSFETs | |
| 93 | 陳旻政 | Investigation of soft breakdown induced reliability issues in ultra-thin oxide SOI devices | |
| 93 | 蔡文哲 | Investigation of Reliability Issues in a Nitride-Based Localized Charge Storage Flash Memory Cell | |
| 94 | 詹前泰 | Bias Temperature Instability in CMOSFETs with Advanced Gate Dielectric | |
| 葉致鍇 | Investigation of Novel PHINES and PREM Flash Memories and Silicon-Nitride Based Light Emitting Transistor | ||
| 林明賢 | An Investigation into the Characteristics of Electromigration Failure Mechanisms in Copper Interconnects | ||
| 95 | 古紹泓 | Investigation of Reliability Issues in Nitride Trap Storage Flash Memory | |
| 97 | 鄭志昌 | Investigation of Transient Hot Carrier Stress and Device Modeling Issues in High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field Effect Transistors | |
| 98 | 唐俊榮 | Reliability and Monte Carlo Analysis in Advanced CMOS and SONOS Flash Memory | |
| 99 | 馬煥淇 | Single Charge Phenomena in Scaled Memory and CMOS Devices | |
| 101 | 邱榮標 | clouders.ee96g@nctu.edu.tw | Statistical Study of Single Charge Phenomena in Advanced CMOS and Flash Memory |
| 104 | 鍾岳庭 | timchngre@gmail.com | Traps Induced Reliability Issues in Resistive Random Access Memory and SONOS Flash Memory |
| 108 | 劉宇恆 | henryliu0306@gmail.com | Trapped Charge Lateral Transport Mechanisms in Silicon Nitride and Data Pattern Effects on Vt Retention Loss in a Charge Trap Flash Memory |
| 109 | 蘇柏誠 | joesu123@gmail.com | Mechanisms and Analytical Modeling of Read and SET/RESET Cycling Induced Performance Degradation in a Resistive Switching Memory |
| 周佑亮 | Investigation of Single Charge Phenomena and Threshold Voltage Distributions in 3D Charge Trap NAND Flash Memory | ||
| 110 | 江宏禮 | Design Space Analysis for Embedded Magnetic Random-Access Memory and Its Optimization for Cryogenic CMOS Circuit | |
| 111 | 江晟民 | RRAM Read-Disturb Modeling and 2-D Simulation of Nitride Electron and Hole Transport in Charge Trap Flash Memory | |
| 碩士班 | |||
| 77 | 張同吉 | 砷化鎵金半場效電晶體中基座陷阱產生慢暫態之電路模擬模式 | |
| 78 | 謝正祥 | 以砷化鎵為基底的量子井元件中熱電子傳導特性之研究 | |
| 潘志新 | 砷化鎵金半場效電晶體熱電子模型二維數值模擬與分析 | ||
| 曾建賢 | 多重量子井場效電晶體之物理及傳輸特性研究 | ||
| 吳昇治 | Dx陷阱中心對高電子移動率電晶體元件與電路之暫態效應與可靠性研究 | ||
| 余楚樵 | DX中心對高電子移動率電晶體暫態行為影響之數值分析 | ||
| 洪俊雄 | 高速元件和電路中雜散效應的數值分析 | ||
| 陳益德 | GaAs/AlGaAs量子井電子傳輸的幾何效應 | ||
| 王冠堯 | 矽質金氧半電晶體熱電子效應之研究 | ||
| 蔡富義 | 分子束磊晶成長之砷化鎵金半場效電晶體低溫緩衝層及頻率相關電流超射效應之研究 | ||
| 80 | 蘇琮凱 | Modeling of electromigration phenomena in integrated circuits | |
| 陳宗文 | Study of one-dimensional electronic transport properties in quantum-well wires | ||
| 81 | 葉文中 | Two-Dimensional Quantum Well Semiconductor Simulation | |
| 蔡文哲 | Three-Dimensional Vacuum Microelectronic Field Emission Device Simulator | ||
| 82 | 陳瑞益 | Two-Dimensional Simulation of Quantum Well Surface Emitting Laser Diodes | |
| 黃林祥 | Design, simulation and characterization of a bandgap reference circuit using parasitic lateral bipolar transistors in a CMOS technology | ||
| 83 | 陳君強 | Low Voltage Hot Carrier Effects in Submicron MOSFET's | |
| 廖婉妤 | Characterization and Modeling of Parasitic BJT in CMOS Technology | ||
| 李殷 | Simulation of Three-Dimensional Vacuum Microelectronic Devices | ||
| 84 | 蔣汝平 | A New Oxide Trap Characterization Technique | |
| 林紹祺 | Electron-Electron Interaction Enhanced Gate Current Injection in n-MOSFET's at Low Drain Voltages | ||
| 85 | 劉家瑋 | Temperature Effect on Interface Trap Induced Drain Leakage Current in n-MOSFET's | |
| 沈冠岳 | Modeling of Gate Leakage Current in Thin Oxide n-MOS Devices | ||
| 王智弘 | A New Technique to Characterize Stress Induced Low-Level Leakage Current in Flash EEPROM Cells | ||
| 87 | 葉致鍇 | Numerical Simulation and Characterization of SILC in Oxides | |
| 黃立元 | Hot Carrier Induced Drain Current Degradation in Thin-Oxide n- and p-MOSFET's | ||
| 韓承憲 | RF CMOS Characterization and Modeling | ||
| 88 | 陳旻政 | Simulation and Characterization of Charge Transport and C-V in Ultra-Thin Gate Oxides | |
| 89 | 張育造 | Noise Simulation for RF CMOS | |
| 李學儀 | FRAM Characterization and Circuit Modeling | ||
| 古紹泓 | SONOS EEPROM Reliability Physics and Characterization | ||
| 90 | 鄭念祖 | Investigation of Low Frequency Noise in Deep-Submicron MOSFET | |
| 張鴻智 | Analysis of Flicker Noise Degradation Mechanism in Ultra-thin Oxide CMOS | ||
| 91 | 江欣凱 | Trapped Charge Energy Distribution and Transport Behavior in SONOS Flash Cells | |
| 李兆琪 | Characterization, Modeling and Reliability of LDMOS Power Devices | ||
| 邱凱翎 | Characteristic Analysis and Simulation of Flicker NOISE in High Performance CMOS | ||
| 92 | 王銘德 | Localized Charge Distribution and Read Current Noise in Nitride Storage Flash Cells | |
| 游建文 | Analysis of Flicker Noise Mechanism in Ultra-Thin Oxide n-MOSFETs | ||
| 93 | 郭晉豪 | Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena | |
| 邵晉輝 | Characterization and SPICE Modeling of High Voltage LDMOS | ||
| 許智維 | Numerical analysis of the retention behavior in nitride storage flash memory | ||
| 94 | 李冠成 | Investigation of NBTI Effect in Oxide pMOSFET from Single Charge Emission | |
| 杜冠潔 | Investigation of spice modeling and reliability issues in high voltage LDMOS | ||
| 薛至宸 | Channel Non-uniformity induced Current Fluctuation due to Random Telegraph Noise in sub-100nm MOSFETs | ||
| 95 | 許家源 | Monte Carlo Simulation of Channel Orientation Dependence of Hole Transport in Strained Silicon | |
| 林家福 | Investigation of Self-Heating and Reliability Issues in Lateral DMOS by Using an Additional Metal Contact Structure | ||
| 吳致融 | Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices | ||
| 李致維 | Monte Carlo Analysis of Secondary Hot Electrons Induced Program Disturb in SONOS Memory Array | ||
| 96 | 李智雄 | Investigation of Reliavility Issues in HfO2 Nanocrystal Flash Memory Cells | |
| 熊勖廷 | Characterization and SPICE Modeling of Lateral Diffused MOS by using a Novel Metal Contact Structure | ||
| 趙元鵬 | Characterization of Program/Erase Charge Lateral Distribution in SONOS Flash Memory Cell by Using RTS Technique | ||
| 林彥君 | TCAD Simulation of Random Program Charge Induced Threshold Voltage Fluctuations in SONOS Device | ||
| 邱子華 | Subband Structures of Silicon and Germanium Channels in P-type Metal-oxide-semiconductor Devices | ||
| 97 | 杜文仙 | Numerical Simulation of Nitride Based Flash Memory and its Application | |
| 98 | 林東陽 | Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory | |
| 鍾岳庭 | Single Charge Phenomena, Characterizations and Physics | ||
| 99 | 王志宇 | Positive Bias Temperature Instability(PBTI) Analysis and Simulation in 22 nm High-k Metal Gate nMOSFETs | |
| 梁書祥 | The Random Telegraph Noise (RTN) Analysis in Ultra Thin High-k Metal Gate CMOS Device | ||
| 王明瑋 | 3D Atomistic Simulation of Single Charge Induced Threshold Voltage Fluctuation on VLSI Devices | ||
| 100 | 房定樺 | dinghua525@gmail.com | Numerical Simulation of High-k/Metal Gate Floating Gate Flash Memory Characteristics and Device Scaling |
| 謝泓達 | hdhsieh.ee99g@nctu.edu.tw | Statistical Characterization and Modeling of ΔVth Distribution in NBTI Recovery and Its Time Evolution | |
| 101 | 李啟偉 | keywayly.ee96@g2.nctu.edu.tw | Statistical Characterization and Modeling of NBTI Induced ∆Vt Distribution in High-k Gate Dielectric pMOSFETs |
| 黃子譯 | noopys0327.ee96@g2.nctu.edu.tw | Random Telegraph Noise (RTN) Analysis and Monte Carlo Simulation in HfOx-based Resistive Random Access Memory | |
| 王柏偉 | Bogwsxnz@gmail.com | Study of Operation Method and Random Telegraph Noise in HfOx-based RRAM | |
| 102 | 鄭宇軒 | asuslover.ee01g@g2.nctu.edu.tw | A New Failure Mode with Respect to Write/Read Disturb in Resistive Memory |
| 何思嫻 | passerby12.ee01g@nctu.edu.tw | Nitride Charge Transport and Its Role in Erase Transient Simulation in SONOS | |
| 103 | 郭晉榕 | austin24.ep97@g2.nctu.edu.tw | Time-zero and Time-dependent Vth Variability in Junctionless Nanowire Transistors |
| 蔡德宏 | dehongtsai.ee02g@nctu.edu.tw | Numerical Simulation of Program/Erase/Retention in Planar and GAA SONOS with Different Dielectrics | |
| 林汶潔 | wjwjlin.ee02g@nctu.edu.tw | Characterization of Cycling Stress Induced Trap Creation and Write Disturb Failure Time Degradation in RRAM | |
| 104 | 鍾季翰 | josh610716@yahoo.com.tw | Investigation of Factors Affecting SET-Disturb Failure Time in WOX RRAM |
| 楊宇翔 | yusiang1992@gmail.com | Numerical Simulation of Lateral Electric Field Induced Nitride Trapped Charge Movement in SONOS | |
| 陳威郡 | alex.ee99@nctu.edu.tw | Characterization of Lateral Electric Field Induced Nitride Trapped Charge Movement in SONOS | |
| 周佑亮 | Characterization of Fresh State RTN Amplitude in a 3D Vertical NAND Flash Cell String | ||
| 105 | 林曉宜 | Data Pattern Effects on Trapped Charge Lateral Transport in Nitride Trap Storage Flash Memory | |
| 許峻齊 | SET/RESET Cycling Induced Read-Disturb Failure Time Degradation in a Resistive Switching Memory | ||
| 杜欣憶 | Operational Speed and Reliability Considerations in Negative Capacitance FET | ||
| 楊琹閔 | Investigation of Trapped Charge Lateral Transport of Silicon Nitride-Based Charge Trap Flash Memory by Numerical Simulation | ||
| 106 | 王志維 | Characterization and Modeling of Read-Disturb Induced SET-State Current Degradation and Read-Disturb Failure Time in a Resistive Switching Memory | |
| 107 | 詹庭鑑 | Investigation of Nitride Electron and Hole Lateral Migration and Data Pattern Effects on Vth Retention Loss in a Multi-Level Charge Trap Flash Memory | |
| 陳昱嘉 | Modeling of Read Operation Induced Conductance Change in Resistive Switching Devices for Neuromorphic Applications | ||
| 王致傑 | Modeling of SET-State Retention Failure Time and Its Voltage Accelerating Qualification Method in a Post-Cycling Resistive Switching Memory | ||
| 曾致遠 | Numerical Simulation of Switching Rate Characteristics in Negative Capacitance FET | ||
| 108 | 許丞鞍 | Simulation of Read Operation Induced Performance Degradation in RRAM-based Neuromorphic Circuit | |
| 杜袖慈 | Program/Erase Cycling Stress Effect on Trap Charge Lateral Migration and Vth Retention Loss in a Multi-Level Charge Trap Flash Memory | ||
| 傅裕文 | Dependence of Endurance Characteristic on SET/RESET Operation Voltage Condition and Modeling of Read-Disturb Failure Time in RRAM | ||
| 吳致融 | Numerical Simulation of Data Pattern Effects on Vt Retention Loss in a Multi-Level Charge Trap Flash Memory | ||
| 109 | 郭恩霖 | Quasi 2D Numerical Simulation of Data Pattern Effects on Vt Retention Loss in a Post Cycling Multi Level Charge Trap Flash Memory | |
| 謝欣玄 | Simulation of Cycling Effect on Read-Induced Inference Accuracy Degradation in an RRAM-Based Neuromorphic Circuit | ||
| 110 | 古珮紜 | 3D TCAD Simulation of Structure and Pass Gate Voltage Effects on Program Characteristics in a Gate All Around NAND Flash Memory String | |
| 林楷閔 | Quasi-2D Simulation of Data Pattern Effects on Vt Retention Loss and Charge Transport in Silicon Nitride in a Charge Trap Flash Memory | ||
| 黃薇倫 | Investigation of Temperature Accelerated Low-Resistance-State Retention Failure in a Resistive Switching Memory | ||
| 111 | 謝奇宏 | 3D TCAD Simulation of Data Pattern Effects on Vt Retention Loss in a Gate All Around Multilevel Charge Trap NAND Flash Memory String | |
| 李華庭 | 3D TCAD Simulation of Grain Boundary Trap Effect on Cell Current Instability in a Gate All Around NAND Flash Memory String |
如資訊有錯或想要更新，煩請撥打實驗室分機，聯絡網站管理員，謝謝。