簡介
汪大暉教授畢業於國立台灣大學電機系，美國伊利諾大學香檳分校電機工程博士。
曾於美國HP實驗室(HP Labs)進行高速砷化鎵元件研發與蒙地卡羅模擬。研究領域包括快閃式記憶體元件，
CMOS元件，高壓元件，奈米結構電荷傳輸理論分析等，目前擁有200多篇國際期刊與會議論文，
及16項國際專利。
汪教授曾擔任IEDM，IRPS，VLSI-TSA等多項國際學術會議技術委員並曾為IEEE IPFA
課程主席與台灣、香港、中國大陸之IEEE 電子元件Newsletter主編。並曾獲得教育部教學獎，
IPFA最佳論文獎，並為2005 VLSI最佳學生論文獎之指導教授。
汪教授目前擔任國際電子元件頂尖期刊
IEEE EDL編輯、旺宏電子顧問與交通大學教授。除此之外，並與工業界擁有多次合作，包括
加拿大NRC、工研院、台積電、聯電、旺宏、矽統、立錡等，都曾進行或正在進行多項研究計畫，計畫內容
涵蓋奈米級CMOS元件、Flash Memory、FinFET、Monte Carlo simulation、Strain CMOS、High K/ Metal Gate
、高壓元件等。汪教授並曾擔任國家高普考典試委員。
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擔任國際學術會議重要職務、受邀演講（Invited Talk）
| Awards and Honors |
| 1990 |
Youth Research Paper Award, Chinese Institute of
Engineers |
| 1991 |
Outstanding Teaching Award, Ministry of Education,
Taiwan |
| 2004 |
Best Paper Award, IEEE Int. Symp. on the Physical and
Failure Analysis of Integrated Circuits (IPFA) |
| 2005 |
Best Student Paper Award (as an thesis advisor and
co-author), VLSI Symp. on Technology |
| 2005 |
TSMC Student Research Award (as thesis advisor) |
| 2006 |
指導博士生詹前泰獲”2006年台灣飛利浦半導體領袖培植計劃得主”第一名 |
| 2007-2010 |
Outstanding Research Award, National Chiao-Tung
University |
| Invited Journal Paper |
| 2006 |
“Program Charge Spatial Distribution in Two-bit Storage
SONOS flash Memory”, Engineering Science & Technology
Bulletin, National Science Council, Taiwan |
| 2007 |
“Bipolar Charge Trapping Induced Anomalous Negative
Bias-Temperature Instability in HfSiON Gate Dielectric
pMOSFETs” IEEE Trans. on Device and Material Reliability
(TDMR) |
| Invited Talks |
| 1998 |
“Hot Carrier Effects in Flash EEPROMs”, Workshop on the Role
of Hydrogen and Deuterium in Hot Electron Device Degradation,
Univ. of Illinois, U.S.A. |
| 2000 |
“Hot Carrier Effects and Tunnel Oxide Reliability in Flash
EEPROMS”, Symp. on Nano Device Technology (SNDT) |
| 2001 |
“Auger Recombination Enhanced Hot
Carrier Effects and Luminescence in MOSFETs”, National Research
Council, Ottawa, Canada |
| 2003 |
“NROM Reliability Physics and Qualification Methodology”,
Infenion, Germany |
| 2003 |
“Reliability Models of Data Retention and Read-Disturb in
2-bit Nitride Storage Flash Memory Cells”, Int. Electron Devices
Meeting (IEDM), Washington D.C., U.S.A. |
| 2004 |
“Comparison of Oxide Breakdown Progression in Ultra-Thin
Oxide SOI and Bulk pMOSFETs,” European Symposium Reliability of
Electron Devices, Failure Physics and Analysis (ESREF), Zurich,
Switzerland |
| 2006 |
“Nitride Trap Storage Flash Memory—Reliability and Scaling
Issues”, Symp. on Nano Device Technology (SNDT) |
| 2008 |
“Reliability Issues in NOR-Type SONOS Flash Memory Scaling,”
National Science Council-Japan Science and Technology Nano
Device Workshop, |
| 2010 |
“Random Telegraph Noise and Scaling Concerns in SONOS Flash
Memory”, Symp. on Nano Device Technology (SNDT) |
| 2011 |
“Non-Volatile Semiconductor Memory Technology in Tera-Bit
Era---3D SONOS”, National Taiwan University |
| Partial List of Professional Activities |
| 1994 |
IEEE senior member |
| 1996 |
Technical Program Committee, Int. Relaibility Physics
Symp. (IRPS) |
| 1999-2000 |
Technical Program Committee, Int. Electron Devices
Meeting (IEDM) |
| 2001-2005 |
Technical Program Chair, Photonics and Semiconductor
Device Reliability Workshop |
| 2002-2007 |
Name in the “Golden List of Reviewers” for IEEE Electron
Device Letters |
| 2003-2005 |
Technical Program Committee, VLSI-Technology, System and
Application |
| 2004 |
Tutorial Chair, IEEE Int. Symp. on the Physical and
Failure Analysis of Integrated Circuits (IPFA) |
| 2004 |
高普考典試委員(電機電子組) |
| 2004 |
Si Subcommittee Chair, Int. Electron Device and
Materials Symp.(IEDMS) |
| 2007 |
櫃檯買賣中心上櫃審議委員 |
| 2007-2008 |
Session Chair, VLSI-Technology, System and Application,
Taiwan |
| 2009 |
交通大學校務基金管理委員 |
| 2009 |
Technical Program Committee, Int. Electron Device and
Materials Symp.(IEDMS) |
| 2010-2011 |
Technical Program Committee, Asian Symposium on Quality
Electronic Design (ASQED) |
| 2010 |
Technical Program Committee, Int. Electron Device and
Materials Symp.(IEDMS) |
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